Saturday, January 30, 2010

Next-Generation touchscreen technology is going to hit soon

After invention of touchscreen technology, many mobile and gadget manufacturing companies have been implementing gorgeous devices to fulfill user needs. Mobile is the best example that we can give. In today's market, touchscreen mobiles are replacing old traditional devices. Because of touchscreen technology is becoming very popular, it has been a big challenge for manufacturers to develop touchscreen which can be having better user experience on it.


The most common touchscreen technologies are resistive and capacitive. Resistive touchscreen is more accurate than capacitive touchscreen but less responsive than that of capacitive touchscreen. In resistive touchscreen, user needs to apply more pressure to react, whereas in capacitive touchscreen, slight touch is require with supporting multi-touch gestures. You can not use sharpen things on capacitive touchscreen devices such as your nails, stylus etc.

The new Pressure-Sensitive touchscreen technology is going to see on our mobile device very soon. We can really see the difference between gentle touch and hard poke with pressure-sensitive touchscreen technology. The new user experience will be allowed with gesture based on amount of pressure applied.

Based on quantum tunneling, this new technology is developed in Peratech (UK). Quantum Tunneling Composite (QTC) is an electrically conductive material used in this technology. From this material, Peratech developers make pressure sensor which are unbelievably thin and can be slipped under any touchscreen also they don't consume any power when idle. So, it is really great for battery life.

New features will be allowing you to simultaneously drag and zoom pictures as well as determining scroll speed according to your force of pressure.

Japanese display manufacture Nissha which makes display for Nintendo, LG etc signed a license contract with Peratech already. We will have gadgets based on this new technology in April very soon.

Source

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